Infineon IPB117N20NFD OptiMOS 5 Power MOSFET: Datasheet, Application Notes, and Technical Specifications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its OptiMOS™ 5 power MOSFET family. The IPB117N20NFD stands as a prime example, representing a significant leap forward in performance for a wide array of demanding applications. This article delves into the technical specifications, key features, and practical application considerations for this advanced MOSFET.
Technical Specifications and Key Features
The IPB117N20NFD is a N-channel power MOSFET built on Infineon's state-of-the-art OptiMOS™ 5 superjunction technology. This technology is the cornerstone of its exceptional performance, enabling ultra-low figures of merit. The device is housed in a TO-Leadless (TOLL) package, which offers an excellent trade-off between compact size and thermal/electrical performance, making it ideal for space-constrained modern power designs.
Its core electrical specifications are impressive:
Drain-Source Voltage (VDS): 200 V
Continuous Drain Current (ID): 117 A at 25°C
On-Resistance (RDS(on)): As low as 3.5 mΩ at 10 V (VGS)
Gate-Source Voltage (VGS): ±20 V
Total Gate Charge (Qg): 78 nC (typical)
The remarkably low RDS(on) directly translates to reduced conduction losses, while the low gate charge (Qg) ensures minimal switching losses. This combination is critical for achieving high efficiency, particularly in high-frequency switching circuits. The TOLL package features an exposed top side for superior thermal performance, allowing for efficient heat dissipation away from the junction, which is vital for maintaining performance and reliability under high load conditions.
Datasheet and Application Notes
The official datasheet is the ultimate source of truth for any design engineer. It provides comprehensive information including:
Absolute maximum ratings and guaranteed operational limits.
Detailed electrical characteristics graphs (e.g., RDS(on) vs. temperature, switching times).
Safe Operating Area (SOA) diagrams.
Package outline and mechanical dimensions.
For successful implementation, Infineon provides extensive application notes covering topics crucial for leveraging the full potential of the IPB117N20NFD. These notes often discuss:
Layout Recommendations: The high switching speed of OptiMOS™ 5 devices requires a careful PCB layout to minimize parasitic inductance and avoid ringing and electromagnetic interference (EMI). This includes using a solid ground plane, keeping high-switching-speed loops tight, and implementing proper gate driving techniques.
Gate Driving Considerations: A dedicated, low-inductance gate driver with sufficient sink/source current capability is essential to quickly turn the device on and off, minimizing time in the linear region and thus switching losses.
Thermal Management: Despite its efficient package, calculating the power dissipation and ensuring adequate cooling through heatsinks or PCB copper pours is mandatory for reliable operation.
Primary Target Applications
The blend of high voltage, high current capability, and exceptional switching performance makes the IPB117N20NFD exceptionally versatile. Its primary applications include:
Switch-Mode Power Supplies (SMPS): Particularly in server, telecom, and industrial power supplies where efficiency standards like 80 Plus Titanium are paramount.
Motor Control and Drives: Used in inverters for controlling brushless DC (BLDC) motors in industrial automation, robotics, and electric mobility.
Solar Inverters: As a key switching component in maximum power point tracking (MPPT) and DC-AC conversion stages.
OR-ing and Hot-Swap Circuits: Leveraging its low RDS(on) to minimize voltage drop and power loss in redundant power systems.
ICGOOODFIND: The Infineon IPB117N20NFD is a benchmark 200 V power MOSFET that exemplifies the efficiency and power density benefits of the OptiMOS™ 5 platform. Its ultra-low on-resistance and gate charge work in tandem to significantly reduce both conduction and switching losses. While its high-performance demands careful attention to gate driving and PCB layout, the payoff is a highly efficient and compact solution for advanced SMPS, motor control, and renewable energy systems.
Keywords: OptiMOS 5, Power MOSFET, Low RDS(on), High Efficiency, TOLL Package.
