Infineon IPD90N04S4-04: High-Performance N-Channel MOSFET for Advanced Power Management
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics places immense demands on power management components. At the heart of many advanced systems, from server power supplies and industrial motor drives to high-end consumer electronics, lies the power MOSFET. The Infineon IPD90N04S4-04 stands out as a premier N-Channel MOSFET engineered to meet these rigorous challenges head-on, delivering a combination of performance characteristics that are critical for next-generation designs.
Fabricated using Infineon's proprietary OptiMOS™ technology, this 40V MOSFET is a benchmark for low-loss switching. Its cornerstone feature is an exceptionally low typical on-state resistance (R DS(on)) of just 1.8 mΩ maximum at 10 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. Designers can push their systems harder or achieve the same performance in a smaller form factor, a key requirement in today's market.
Beyond its stellar DC performance, the IPD90N04S4-04 excels in dynamic operation. The device exhibits low gate charge (Q G) and outstanding switching characteristics. This results in significantly reduced switching losses, allowing for operation at higher frequencies. The ability to switch faster is crucial for increasing the power density of switch-mode power supplies (SMPS) and DC-DC converters, as it enables the use of smaller passive components like inductors and capacitors.
Furthermore, this MOSFET is designed with robustness in mind. It features a high peak current capability and an avalanche ruggedness that ensures operational stability and longevity even under demanding conditions, such as load transients or unexpected voltage spikes. This makes it an exceptionally reliable choice for automotive applications (qualified to AEC-Q101), industrial automation, and other environments where failure is not an option.
The combination of low R DS(on), fast switching speed, and high robustness makes the IPD90N04S4-04 an ideal solution for a wide array of applications. It is particularly suited for:
Primary and secondary side switching in SMPS
Synchronous rectification in DC-DC converters
Motor control and drive circuits
Class D audio amplifiers
Active load and OR-ing switches
ICGOOODFIND: The Infineon IPD90N04S4-04 is a top-tier N-Channel MOSFET that sets a high standard for performance in advanced power management. Its superior blend of ultra-low on-state resistance, fast switching capability, and proven robustness provides engineers with a critical component to optimize efficiency, increase power density, and enhance the reliability of their most demanding designs.
Keywords: OptiMOS™, Low R DS(on), High Efficiency, Power Management, Switching Performance.
