BGA416E6327: Datasheet, Application Circuit, and Pin Configuration

The BGA416E6327 from Infineon Technologies is a silicon NPN broadband bipolar transistor housed in a lead-free SOT-343 (SC-70) surface-mount package. It is specifically engineered for high-performance RF amplification in applications requiring very low noise and high gain at frequencies up to 6 GHz. This makes it an ideal choice for infrastructure, cellular, and wireless communication systems, including GPS, GSM, DCS, and WLAN.

Pin Configuration

The compact SOT-343 package contains four pins. The pinout is as follows:

Pin 1 (Emitter 1): This pin is internally connected to the emitter and is typically connected to RF ground for optimal stability and performance.

Pin 2 (Base): The input pin for the RF signal. This pin requires a DC bias circuit to set the transistor's operating point.

Pin 3 (Collector): The output pin for the amplified RF signal. This pin is connected to the supply voltage through an RF choke and impedance matching networks.

Pin 4 (Emitter 2): Internally connected to Pin 1 (Emitter), it must also be connected to ground to provide a stable low-impedance path.

Datasheet Overview and Key Specifications

The datasheet for the BGA416E6327 provides critical information for designers. Key absolute maximum ratings and typical electrical characteristics include:

Transition Frequency (fT): 8 GHz

Gain (|S21|²): Typically 18.5 dB at 1.8 GHz

Noise Figure (NF): A remarkably low 1.5 dB at 1.8 GHz, which is crucial for receiver front-ends.

Output Power (P1dB): Approximately 15.5 dBm at 1.8 GHz, indicating good linearity.

Collector-Emitter Voltage (VCEO): 10 V

Collector Current (IC): 50 mA

These specifications highlight the device's primary strengths: providing high gain while introducing minimal noise into the signal path.

Typical Application Circuit

A standard application circuit for the BGA416E6327 as a low-noise amplifier (LNA) is shown in its datasheet. The design requires both RF and DC conditioning:

1. Input Matching Network: A series inductor and a shunt capacitor are often used to match the input impedance (typically 50 Ω) to the transistor's base for maximum power transfer and minimum noise figure.

2. DC Bias Network: The base is biased through a current-limiting resistor from a voltage supply. An RF choke (inductor) and bypass capacitors are used at the base and collector to isolate the DC bias from the RF signal, preventing RF energy from leaking into the power supply.

3. Output Matching Network: Similar to the input, a network of inductors and capacitors is used at the collector to match the transistor's output impedance back to 50 Ω, ensuring maximum power delivery to the next stage.

The emitter pins (1 and 4) must be connected directly to a high-quality RF ground plane via very short PCB traces to ensure stability and achieve the specified noise and gain performance.

ICGOODFIND Summary

The BGA416E6327 is a premier solution for high-gain, low-noise amplification in the RF signal chain. Its excellent combination of a sub-2 dB noise figure and high gain across a broad frequency range makes it indispensable for sensitive receiver applications in modern wireless communication systems. Designers must pay close attention to the PCB layout, particularly the grounding of the emitter, to realize the full performance potential of this transistor.

Keywords: BGA416E6327, Low-Noise Amplifier (LNA), RF Transistor, SOT-343, Noise Figure