Infineon IPP072N10N3: High-Performance N-Channel Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands components that deliver exceptional performance. The Infineon IPP072N10N3 stands out as a premier N-Channel power MOSFET engineered specifically to meet these challenges in a wide array of switching applications. This device encapsulates Infineon's advanced semiconductor technology, offering designers a powerful tool to optimize their systems.

Built on Infineon's proprietary OptiMOS™ technology, the IPP072N10N3 is designed for low-voltage applications, featuring a drain-source voltage (V_DS) of 100 V and a continuous drain current (I_D) of 72 A. Its core strength lies in its exceptionally low typical on-state resistance (R_DS(on)) of just 7.2 mΩ. This ultra-low resistance is a critical factor for enhancing efficiency, as it directly minimizes conduction losses when the MOSFET is fully switched on. The result is less energy wasted as heat, leading to cooler operation and higher overall system efficiency.

Beyond its impressive R_DS(on), this MOSFET is optimized for fast switching performance. The low gate charge (Q_G) and figure of merit (FOM) ensure rapid turn-on and turn-off transitions. This is paramount in high-frequency switching power supplies, such as Server & Telecom SMPS, where switching losses can dominate. By reducing these losses, the IPP072N10N3 enables designers to push switching frequencies higher, allowing for the use of smaller passive components like inductors and capacitors, thereby increasing power density.

The device is also an ideal choice for motor control and drive circuits in industrial automation, robotics, and automotive systems. Its high current handling capability and robustness make it suitable for driving brushed DC and brushless DC (BLDC) motors. Furthermore, its efficiency makes it a perfect fit for synchronous rectification in switched-mode power supplies (SMPS), a technique crucial for achieving peak efficiency in modern AC-DC and DC-DC converters.

Housed in a TO-220 package, the IPP072N10N3 offers a proven and reliable form factor with excellent thermal characteristics, facilitating easy mounting to a heatsink for effective heat dissipation in high-power scenarios.

ICGOOODFIND: The Infineon IPP072N10N3 is a high-performance champion, delivering superior efficiency through its ultra-low R_DS(on) and fast switching capabilities. It is an optimal solution for engineers designing high-efficiency power systems, including SMPS, motor drives, and power conversion stages, where minimizing energy loss and maximizing reliability are top priorities.

Keywords: OptiMOS™, Low R_DS(on), High-Efficiency, Synchronous Rectification, Power Density.